丝印：TE；Package：SOT-353；2-input AND gate

General description 74HC1G08 and 74HCT1G08 are high-speed, Si-gate CMOS devices. They provide a 2-input AND function. The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V. The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V. The

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丝印：TE；Package：SOT-353；2-input AND gate

General description 74HC1G08 and 74HCT1G08 are high-speed, Si-gate CMOS devices. They provide a 2-input AND function. The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V. The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V. The

文件：69.2 Kbytes 页数：12 Pages

恩XP

丝印：TE；Package：TSSOP5；2-input AND gate

1. General description The 74HC1G08-Q100; 74HCT1G08-Q100 is a single 2-input AND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. This product has been qualified to the Automotive Electronics Council (AEC) s

文件：233.45 Kbytes 页数：12 Pages

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丝印：TE；Package：XSON5；2-input AND gate

1. General description The 74HC1G08-Q100; 74HCT1G08-Q100 is a single 2-input AND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. This product has been qualified to the Automotive Electronics Council (AEC) s

文件：233.45 Kbytes 页数：12 Pages

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2-input AND gate

1. General description The 74HC1G08-Q100; 74HCT1G08-Q100 is a single 2-input AND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. This product has been qualified to the Automotive Electronics Council (AEC) s

文件：233.45 Kbytes 页数：12 Pages

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丝印：T08；Package：SC-74A；Automotive product qualification in accordance with AEC-Q100

文件：727.7 Kbytes 页数：12 Pages

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丝印：TE；Package：TSSOP5；Automotive product qualification in accordance with AEC-Q100

文件：727.7 Kbytes 页数：12 Pages

NEXPERIA

安世

2-input AND gate

74HC1G08-Q100 and 74HCT1G08-Q100 are high-speed, Si-gate CMOS devices. They provide a 2-input AND function.\n The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V.\n The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.\n The sta • Automotive product qualification in accordance with AEC-Q100 (Grade 1)• Specified from -40 °C to +85 °C and from -40 °C to +125 °C\n• Symmetrical output impedance\n• Low power dissipation\n• ESD protection:• MIL-STD-883, method 3015 exceeds 2000 V\n• MM JESD22-A115-A exceeds 200 V (C = 200 pF, R =;

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2-input AND gate

74HC1G08 and 74HCT1G08 are high-speed, Si-gate CMOS devices. They provide a 2-input AND function.\n The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V.\n The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.\n The standard outp • Symmetrical output impedance\n• High noise immunity\n• Low power dissipation\n• Balanced propagation delays\n• SOT353-1 and SOT753 package options;

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2-input AND gate

74HC1G08-Q100 and 74HCT1G08-Q100 are high-speed, Si-gate CMOS devices. They provide a 2-input AND function.\n The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V.\n The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.\n The sta • Automotive product qualification in accordance with AEC-Q100 (Grade 1)• Specified from -40 °C to +85 °C and from -40 °C to +125 °C\n\n• Symmetrical output impedance\n• High noise immunity\n• Low power dissipation\n• Balanced propagation delays\n• ESD protection:• MIL-STD-883, method 3015 exceeds 2;

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