74HCT03D

Quad 2-input NAND gate

GENERALDESCRIPTION The74HC/HCT03arehigh-speedSi-gateCMOSdevicesandarepincompatiblewithlowpowerSchottkyTTL(LSTTL).TheyarespecifiedincompliancewithJEDECstandardno.7A. The74HC/HCT03providethe2-inputNANDfunctionThe74HC/HCT03haveopen-drainN-transistoroutputs

PHI

74HCT03D

Quad 2-input NAND gate; open-drain output

1.Generaldescription The74HC03;74HCT03isaquad2-inputNANDgatewithopen-drainoutputs.Inputsincludeclamp diodesthatenabletheuseofcurrentlimitingresistorstointerfaceinputstovoltagesinexcessof VCC. 2.Featuresandbenefits •Widesupplyvoltagerangefrom2.0Vto6.

74HCT03D

Quad 2-input NAND gate; open-drain output; • Input levels:• For 74HC03: CMOS level\n• For 74HCT03: TTL level\n\n• Complies with JEDEC standard no. 7A\n• ESD protection:• HBM JESD22-A114F exceeds 2000 V\n• MM JESD22-A115-A exceeds 200 V\n\n• Multiple package options\n• Specified from -40°C to +85°C and from -40°C to +125°C\n;

The 74HC03; 74HCT03 is a quad 2-input NAND gate with open-drain outputs. Inputs include clamp diodes that enable the use of current limiting resistors to interface inputs to voltages in excess of VCC.\n

74HCT03DB-Q100

Quad 2-input NAND gate; • Automotive product qualification in accordance with AEC-Q100 (Grade 1)• Specified from -40 °C to +85 °C and from -40 °C to +125 °C\n\n• Input levels:• For 74HC03-Q100: CMOS level\n• For 74HCT03-Q100: TTL level\n\n• ESD protection:• MIL-STD-883, method 3015 exceeds 2000 V\n• HBM JESD22-A114F exceeds 2000 V\n• MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 Ω)\n\n• Multiple package options\n;

The 74HC03-Q100; 74HCT03-Q100 is a quad 2-input NAND gate with open-drainoutputs. Inputs include clamp diodes that enable the use of current limiting resistors tointerface inputs to voltages in excess of VCC.\n This product has been qualified to the Automotive Electronics Council (AEC) standardQ100 (Grade 1) and is suitable for use in automotive applications.\n

74HCT03D-Q100

Quad 2-input NAND gate; • Automotive product qualification in accordance with AEC-Q100 (Grade 1)• Specified from -40°C to +85°C and from -40°C to +125°C\n\n• Input levels:• For 74HC03-Q100: CMOS level\n• For 74HCT03-Q100: TTL level\n\n• ESD protection:• MIL-STD-883, method 3015 exceeds 2000 V\n• HBM JESD22-A114F exceeds 2000 V\n• MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0Ω)\n\n• Multiple package options\n;

The 74HC03-Q100; 74HCT03-Q100 is a quad 2-input NAND gate with open-drain outputs. Inputs include clamp diodes that enable the use of current limiting resistors to interface inputs to voltages in excess of VCC.\n This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.\n

74HCT03DB-Q100

Quad 2-input NAND gate

74HCT03D-Q100

Quad 2-input NAND gate

74HCT03D,653

Package：14-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 门和反相器 描述：IC GATE NAND OD 4CH 2-INP 14SO

ETC

74HCT03DB,112

Package：14-SSOP（0.209"，5.30mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 门和反相器 描述：IC GATE NAND OD 4CH 2-INP 14SSOP

ETC

74HCT03DB,118

Package：14-SSOP（0.209"，5.30mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 门和反相器 描述：IC GATE NAND OD 4CH 2-INP 14SSOP

ETC