LOW-VOLTAGE 10-BIT BUS SWITCH

FEATURES: • 5Ω A/B bi-directional bus switch • Isolation under power-off conditions • Over-voltage tolerant • Latch-up performance exceeds 100mA • VCC = 2.3V - 3.6V, Normal Range • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Available in QSOP a

文件：265.07 Kbytes 页数：6 Pages

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10-bit bus switch with 5-bit output enables

文件：857.26 Kbytes 页数：19 Pages

NEXPERIA

安世

Low-Voltage 10-Bit Bus Switch

The 74CBTLV3384 is a ten bit high-speed bus switch with low on-state resistance of the switch allowing connections to be made with minimal propagation delay. The device is organized as dual 5-bit bus switches with separate outputenable (OE) inputs, to allow use as two 5-bit bus switches or one 10-bi 5 ohm A/B bi-directional bus switch\nIsolation under power-off conditions\nOver-voltage tolerant\nLatch-up performance exceeds 100mA\nVCC = 2.3V - 3.6V, Normal Range\nESD > 2000V per MIL-STD-883, Method 3015\n> 200V using machine model (C = 200pF, R = 0)\nAvailable in 24 pin QSOP and TSSOP packages;

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LOW-VOLTAGE 10-BIT FET BUS SWITCH

5-Ω Switch Connection Between Two Ports Rail-to-Rail Switching on Data I/O Ports Ioff Supports Partial-Power-Down Mode Operation Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds JESD 22 − 2000-V Human-Body Model (A114-A) − 200-V Machine Model (A115-A) description/o

文件：600.6 Kbytes 页数：18 Pages

TI

德州仪器

LOW-VOLTAGE 10-BIT FET BUS SWITCH

5-Ω Switch Connection Between Two Ports Rail-to-Rail Switching on Data I/O Ports Ioff Supports Partial-Power-Down Mode Operation Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds JESD 22 − 2000-V Human-Body Model (A114-A) − 200-V Machine Model (A115-A) description/o

文件：600.6 Kbytes 页数：18 Pages

TI

德州仪器

丝印：CBTLV3384；Package：SSOP；LOW-VOLTAGE 10-BIT FET BUS SWITCH

5-Ω Switch Connection Between Two Ports Rail-to-Rail Switching on Data I/O Ports Ioff Supports Partial-Power-Down Mode Operation Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds JESD 22 − 2000-V Human-Body Model (A114-A) − 200-V Machine Model (A115-A) description/o

文件：599.79 Kbytes 页数：18 Pages

TI

德州仪器

LOW-VOLTAGE 10-BIT BUS SWITCH

FEATURES: • 5Ω A/B bi-directional bus switch • Isolation under power-off conditions • Over-voltage tolerant • Latch-up performance exceeds 100mA • VCC = 2.3V - 3.6V, Normal Range • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Available in QSOP a

文件：265.07 Kbytes 页数：6 Pages

RENESAS

瑞萨

LOW-VOLTAGE 10-BIT BUS SWITCH

FEATURES: • 5Ω A/B bi-directional bus switch • Isolation under power-off conditions • Over-voltage tolerant • Latch-up performance exceeds 100mA • VCC = 2.3V - 3.6V, Normal Range • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Available in QSOP a

文件：265.07 Kbytes 页数：6 Pages

RENESAS

瑞萨

LOW-VOLTAGE 10-BIT BUS SWITCH

FEATURES: • 5Ω A/B bi-directional bus switch • Isolation under power-off conditions • Over-voltage tolerant • Latch-up performance exceeds 100mA • VCC = 2.3V - 3.6V, Normal Range • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Available in QSOP a

文件：265.07 Kbytes 页数：6 Pages

RENESAS

瑞萨

LOW-VOLTAGE 10-BIT BUS SWITCH

FEATURES: • 5Ω A/B bi-directional bus switch • Isolation under power-off conditions • Over-voltage tolerant • Latch-up performance exceeds 100mA • VCC = 2.3V - 3.6V, Normal Range • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Available in QSOP a

文件：265.07 Kbytes 页数：6 Pages

RENESAS

瑞萨