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74AUP1G00GF数据手册集成电路(IC)的门反相器规格书PDF

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厂商型号

74AUP1G00GF

参数属性

74AUP1G00GF 封装/外壳为6-XFDFN;包装为卷带(TR);类别为集成电路(IC)的门反相器;产品描述:IC GATE NAND 1CH 2-INP 6XSON

功能描述

Low-power 2-input NAND gate

封装外壳

6-XFDFN

制造商

Nexperia Nexperia B.V. All rights reserved

中文名称

安世 安世半导体(中国)有限公司

数据手册

下载地址下载地址二

更新时间

2025-8-7 19:10:00

人工找货

74AUP1G00GF价格和库存,欢迎联系客服免费人工找货

74AUP1G00GF规格书详情

描述 Description

Low-power 2-input NAND gate - The 74AUP1G00 provides the single 2-input NAND function. Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial Power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.

特性 Features

Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards: JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)

技术参数

  • 制造商编号

    :74AUP1G00GF

  • 生产厂家

    :Nexperia

  • Product status

    :Production

  • V_CC (V)

    :1.1 - 3.6

  • Logic switching levels

    :CMOS

  • Output drive capability (mA)

    :+/- 1.9

  • t_pd (ns)

    :8.3

  • f_max (MHz)

    :70

  • No of bits

    :1

  • Power dissipation considerations

    :ultra low

  • T_amb (Cel)

    :-40~125

  • R_th(j-a) (K/W)

    :311

  • Ψ_th(j-top) (K/W)

    :7.7

  • R_th(j-c) (K/W)

    :157

  • Package name

    :XSON6

供应商 型号 品牌 批号 封装 库存 备注 价格
恩XP
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一级代理,专注军工、汽车、医疗、工业、新能源、电力
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恩XP
24+
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30000
原装正品公司现货,假一赔十!
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2450+
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只做原装正品假一赔十为客户做到零风险!!
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恩XP
23+
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原装现货订货价格优势
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恩XP
25+
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全新原厂原装正品现货 欢迎咨询
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恩XP
22+
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现货,原厂原装假一罚十!
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恩XP
21+
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8080
只做原装,质量保证
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