The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS device

DESCRIPTION The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS device. The 74AHC2G/AHCT2G00 provides the 2-input NAND gate function. FEATURES • Symmetrical output impedance • High noise immunity • ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-

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PHI

PHI

Dual 2-input NAND gate

General description The 74AHC2G00; 74AHCT2G00 is a high-speed Si-gate CMOS device. The 74AHC2G00; 74AHCT2G00 provides two 2-input NAND gates. Features ■ Symmetrical output impedance ■ High noise immunity ■ ESD protection: ◆ HBM JESD22-A114E exceeds 2000 V ◆ MM JESD2

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恩XP

丝印：A00；Package：SOT505-2；Dual 2-input NAND gate

1. General description The 74AHC2G00; 74AHCT2G00 are high-speed Si-gate CMOS devices. They provide two 2-input NAND gates. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5

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NEXPERIA

安世

丝印：a00；Package：TSSOP8；Dual 2-input NAND gate

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NEXPERIA

安世

Dual 2-input NAND gate

The 74AHC2G00; 74AHCT2G00 are high-speed Si-gate CMOS devices. They provide two 2-input NAND gates.\n The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.\n The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V. • Symmetrical output impedance\n• High noise immunity\n• ESD protection:• HBM JESD22-A114F exceeds 2000 V\n• MM JESD22-A115-A exceeds 200 V\n• CDM JESD22-C101C exceeds 1000 V\n\n• Low power dissipation\n• Balanced propagation delays\n• Specified from -40 °C to +85 °C and from -40 °C to +125 °C;

Nexperia

安世

Dual 2-input NAND gate

The 74AHC2G00-Q100; 74AHCT2G00-Q100 are high-speed Si-gate CMOS devices. They provide two 2-input NAND gates.\n The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.\n The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.\n T • Automotive product qualification in accordance with AEC-Q100 (Grade 1)• Specified from -40 °C to +85 °C and from -40 °C to +125 °C\n\n• Symmetrical output impedance\n• High noise immunity\n• ESD protection:• MIL-STD-883, method 3015 exceeds 2000 V\n• HBM JESD22-A114F exceeds 2000 V\n• MM JESD22-A1;

Nexperia

安世

Package：8-TSSOP，8-MSOP（0.118"，3.00mm 宽）；包装：管件 类别：集成电路（IC） 门和反相器 描述：IC GATE NAND 2CH 2-INP 8TSSOP

Nexperia USA Inc.

Package：8-TSSOP，8-MSOP（0.118"，3.00mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 门和反相器 描述：IC GATE NAND 2CH 2-INP 8TSSOP

Nexperia USA Inc.