Quad Buffer with 3-STATE Outputs

General Description The AC/ACT125 contains four independent non-inverting buffers with 3-STATE outputs. Features ■ICCreduced by 50 ■Outputs source/sink 24 mA ■ACT125 has TTL-compatible outputs

文件：90.53 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

Quad Buffer with 3-STATE Outputs

General Description The AC/ACT125 contains four independent non-inverting buffers with 3-STATE outputs. Features ■ICCreduced by 50 ■Outputs source/sink 24 mA ■ACT125 has TTL-compatible outputs

文件：310.19 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

QUAD BUS BUFFERS 3-STATE

DESCRIPTION The 74ACT125 is an advanced high-speed CMOS QUAD BUS BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 5ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 4µA(MAX.) at TA=25°C ■ COMPATIBLE WITH TTL OUTPUTS

文件：75.11 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

QUAD BUS BUFFERS (3-STATE)

DESCRIPTION The 74ACT125 is an advanced high-speed CMOS QUAD BUS BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 5ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 4µA(MAX.) at TA=25°C ■ COMPATIBLE WITH TTL OUTPUTS

文件：178.32 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Quad Buffer with 3?뭆tate Outputs

文件：142.54 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Quad Buffer with 3-STATE Outputs

文件：309.25 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

Quad Buffer with TRI-STATE Outputs

文件：162.02 Kbytes 页数：8 Pages

NSC

国半

Quad Buffer/Line Driver with 3-State Output

Description\nThe HD74AC125/HD74ACT125 is an quad buffer and line driver designed to be employed as a memory address driver, clock driver and bus oriented transmitter/receiver which provides improved PC board density. •  3-State Outputs Drive Bus Lines or Buffer Memory Address Registers\n•  Outputs Source/Sink 24 mA\n•  HD74ACT125 has TTL-Compatible Inputs;

HITACHI

日立

QUAD BUS BUFFERS (3-STATE)

ST

意法半导体

QUAD BUS BUFFERS 3-STATE

DESCRIPTION The 74ACT125 is an advanced high-speed CMOS QUAD BUS BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 5ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 4µA(MAX.) at TA=25°C ■ COMPATIBLE WITH TTL OUTPUTS

文件：75.11 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体