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71V424S

3.3V CMOS Static RAM 4 Meg (512K x 8-Bit)

Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V424S10PHG

3.3V CMOS Static RAM

Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V424S10PHG

3.3V CMOS Static RAM 4 Meg (512K x 8-Bit)

Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V424S10PHG8

3.3V CMOS Static RAM

Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V424S10PHG8

3.3V CMOS Static RAM 4 Meg (512K x 8-Bit)

Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V424S10PHGI

3.3V CMOS Static RAM

Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V424S10PHGI

3.3V CMOS Static RAM 4 Meg (512K x 8-Bit)

Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V424S10PHGI8

3.3V CMOS Static RAM

Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V424S10PHGI8

3.3V CMOS Static RAM 4 Meg (512K x 8-Bit)

Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V424S10YG

3.3V CMOS Static RAM

Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V424S10YG

3.3V CMOS Static RAM 4 Meg (512K x 8-Bit)

Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V424S10YG8

3.3V CMOS Static RAM

Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V424S10YG8

3.3V CMOS Static RAM 4 Meg (512K x 8-Bit)

Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V424S10YGI

3.3V CMOS Static RAM

Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V424S10YGI

3.3V CMOS Static RAM 4 Meg (512K x 8-Bit)

Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V424S10YGI8

3.3V CMOS Static RAM

Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V424S10YGI8

3.3V CMOS Static RAM 4 Meg (512K x 8-Bit)

Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V424S12PHG

3.3V CMOS Static RAM

Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71V424S12PHG

3.3V CMOS Static RAM 4 Meg (512K x 8-Bit)

Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V424S12PHG8

3.3V CMOS Static RAM

Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

详细参数

  • 型号:

    71V424S

  • 功能描述:

    静态随机存取存储器 512Kx8 ASYNCHRONOUS 3.3V CMOS 静态随机存取存储器

  • RoHS:

  • 制造商:

    Cypress Semiconductor

  • 存储容量:

    16 Mbit

  • 组织:

    1 M x 16

  • 访问时间:

    55 ns

  • 电源电压-最大:

    3.6 V

  • 电源电压-最小:

    2.2 V

  • 最大工作电流:

    22 uA

  • 最大工作温度:

    + 85 C

  • 最小工作温度:

    - 40 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    TSOP-48

  • 封装:

    Tray

供应商型号品牌批号封装库存备注价格
IDT
16+
原厂封装
2000
原装现货假一罚十
询价
IDT
RoHSCompliant
Tray
80
neworiginal
询价
IDT
23+
NA
117
专做原装正品,假一罚百!
询价
IDT
22+
TSOP44
41784
原装正品现货
询价
原装IDT
19+
TSOP44
20000
询价
IDT
1942+
TSOP44
9852
只做原装正品现货或订货!假一赔十!
询价
IDT
20+
44TSOP
65790
原装优势主营型号-可开原型号增税票
询价
Integrated Device Technology (
2022+
1
全新原装 货期两周
询价
IDT
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
原装IDT
21+
TSOP44
35200
一级代理/放心采购
询价
更多71V424S供应商 更新时间2024-5-27 13:32:00