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7164L35DB

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p

文件:213.71 Kbytes 页数:12 Pages

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7164L35TDB

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p

文件:213.71 Kbytes 页数:12 Pages

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7164L45DB

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p

文件:213.71 Kbytes 页数:12 Pages

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7164L45TDB

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p

文件:213.71 Kbytes 页数:12 Pages

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7164L55DB

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p

文件:213.71 Kbytes 页数:12 Pages

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7164L55TDB

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p

文件:213.71 Kbytes 页数:12 Pages

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7164L70DB

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p

文件:213.71 Kbytes 页数:12 Pages

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7164L70TDB

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p

文件:213.71 Kbytes 页数:12 Pages

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7164L85DB

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p

文件:213.71 Kbytes 页数:12 Pages

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7164L85TDB

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p

文件:213.71 Kbytes 页数:12 Pages

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产品属性

  • 产品编号:

    716

  • 制造商:

    TPI (Test Products Int)

  • 类别:

    测试与计量 > 设备 - 环境检测仪

  • 系列:

    716

  • 包装:

  • 类型:

    气体分析仪

  • 用于测量:

    可燃气体

  • 包括:

    适配器,充电器,护套,箱子,过滤器,手册,探头,旋塞,管子

  • 描述:

    FLUE GAS ANALYZER

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更多716供应商 更新时间2026-1-22 16:30:00