CMOS Static RAM 256K (32K x 8-Bit)

Features ◆ 32K x 8 advanced high-speed CMOS static RAM ◆ Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options ◆ Equal access and cycle times – Commercial: 12ns – Commercial and Industrial: 15/20/25ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inp

文件：191.21 Kbytes 页数：9 Pages

RENESAS

瑞萨

CMOS Static RAM 256K (32K x 8-Bit)

Features ◆ 32K x 8 advanced high-speed CMOS static RAM ◆ Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options ◆ Equal access and cycle times – Commercial: 12ns – Commercial and Industrial: 15/20/25ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inp

文件：191.21 Kbytes 页数：9 Pages

RENESAS

瑞萨

CMOS Static RAM 256K (32K x 8-Bit)

Features ◆ 32K x 8 advanced high-speed CMOS static RAM ◆ Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options ◆ Equal access and cycle times – Commercial: 12ns – Commercial and Industrial: 15/20/25ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inp

文件：191.21 Kbytes 页数：9 Pages

RENESAS

瑞萨

CMOS Static RAM 256K (32K x 8-Bit)

Features ◆ 32K x 8 advanced high-speed CMOS static RAM ◆ Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options ◆ Equal access and cycle times – Commercial: 12ns – Commercial and Industrial: 15/20/25ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inp

文件：191.21 Kbytes 页数：9 Pages

RENESAS

瑞萨

CMOS Static RAM 256K (32K x 8-Bit)

Features ◆ 32K x 8 advanced high-speed CMOS static RAM ◆ Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options ◆ Equal access and cycle times – Commercial: 12ns – Commercial and Industrial: 15/20/25ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inp

文件：191.21 Kbytes 页数：9 Pages

RENESAS

瑞萨

256K x 18 Synchronous-Pipelined Cache Tag RAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast match times: 3.5, 3.8,

文件：237.24 Kbytes 页数：24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 18 Synchronous-Pipelined Cache Tag RAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast match times: 3.5, 3.8,

文件：237.24 Kbytes 页数：24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 18 Synchronous-Pipelined Cache Tag RAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast match times: 3.5, 3.8,

文件：237.24 Kbytes 页数：24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 18 Synchronous-Pipelined Cache Tag RAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast match times: 3.5, 3.8,

文件：237.24 Kbytes 页数：24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CMOS Static RAM 256K (32K x 8-Bit)

文件：69.68 Kbytes 页数：8 Pages

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