CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly

文件：188.35 Kbytes 页数：9 Pages

RENESAS

瑞萨

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly

文件：188.35 Kbytes 页数：9 Pages

RENESAS

瑞萨

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly

文件：188.35 Kbytes 页数：9 Pages

RENESAS

瑞萨

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly

文件：188.35 Kbytes 页数：9 Pages

RENESAS

瑞萨

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly

文件：188.35 Kbytes 页数：9 Pages

RENESAS

瑞萨

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly

文件：188.35 Kbytes 页数：9 Pages

RENESAS

瑞萨

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly

文件：188.35 Kbytes 页数：9 Pages

RENESAS

瑞萨

Ultrasonic Level Measurement Compact transmitters for non-contact level measurement of fluids, pastes and coarse bulk materials

Features and benefits • Quick and simple commissioning via menu-guided onsite operation with four-line plain text display; 7 languages selectable • Envelope curves on the on-site display for simple diagnosis • Linearization function (up to 32 points) for conversion of the measured value int

文件：2.17712 Mbytes 页数：28 Pages

EH

恩德斯

Simple Solution for Dynamically Programming the Output Voltage of DC-DC Converters

INTRODUCTION  Figure 1 shows a typical dc-to-dc converter configuration. As in many PWM controllers, the non-inverting input of the voltage feedback error amplifier is internally connected to the reference voltage, Vr. The output voltage of the converter is set by a resistor divider network

文件：77.32 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

Common Mode EMI Chokes

Special Features • Dual winding • Low radiation • High current capacity • High inductance • Dielectric strength 1000Vrms • Mounted on VW-1 rated header • Fixed pins for easy PCB insertion • Operating temperature -55 to +105°C

文件：55.4 Kbytes 页数：1 Pages

Bourns

伯恩斯