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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
70T633S12BF	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S12BF8	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S12BFGI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S12BFGI8	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S12BFI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S12BFI8	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S12BFG	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S12BFG	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S12BFG8	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S12BFG8	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S12BFGI	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S12BFGI	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S12BFGI8	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S12BFGI8	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUS DUAL-PORT STATIC RAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S12BFGI8	文件：100 bytes Page：1 Pages	包装：托盘封装/外壳：208-LFBGA 类别：集成电路（IC）存储器描述：IC SRAM 9MBIT PARALLEL 208CABGA	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S12BFI	文件：100 bytes Page：1 Pages	包装：托盘封装/外壳：208-LFBGA 类别：集成电路（IC）存储器描述：IC SRAM 9MBIT PARALLEL 208CABGA	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S12BFI8	文件：100 bytes Page：1 Pages	包装：托盘封装/外壳：208-LFBGA 类别：集成电路（IC）存储器描述：IC SRAM 9MBIT PARALLEL 208CABGA	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S12BC	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S12BCG	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUSDUAL-PORTSTATICRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S12BCG	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市振宏微科技有限公司	70T633S12BFGI8	IDT	23+	NA	10726	专做原装正品,假一罚百!	询价
深圳市弘为电子有限公司	70T633S12BFI	IDT	2019	SMD	324554	原装进口现货	询价
深圳市斌腾达科技有限公司	70T633S12BFGI	IDT, Integrated Device Technol	21+	165-LBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	70T633S12BFGI	IDT, Integrated Device Technol	21+	208-CABGA(15x15)	56200	一级代理/放心采购	询价
深圳市芯祺盛科技有限公司	70T633S12BFGI8	RENESAS(瑞萨)/IDT	1921+	CABGA-208(15x15)	3575	向鸿仓库现货,优势绝对的原装!	询价
深圳市艾宇欣科技有限公司	70T633S12BFI	IDT	1931+	N/A	1186	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿国际（香港）有限公司	70T633S12BFGI	RENESAS(瑞萨)/IDT	2117+	CABGA-208(15x15)	315000	7个/托盘一级代理专营品牌!原装正品,优势现货,长期	询价
深圳市科雨电子有限公司	70T633S12BFGI8	IDT	20+	BGA-208	1000	就找我吧!--邀您体验愉快问购元件!	询价
深圳市冠亿通科技有限公司	70T633S12BFI8	Renesas	21+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
讯运(深圳/上海)电子有限公司	70T633S12BFI8	RENESAS(瑞萨)/IDT	2021+	CABGA-208(15x15)	499		询价

更多70T633S12BF供应商更新时间2024-4-30 17:48:00

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