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70T3509MS133BPGI

HIGH-SPEED 2.5V 1024K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeatfeatures ◆Inter

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70T3509MS133BPGI

HIGH-SPEED 2.5V SYNCHRONOUS DUAL-PORT STATIC RAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3509MS133BPGI

包装:托盘 封装/外壳:256-BGA 类别:集成电路(IC) 存储器 描述:IC SRAM 36MBIT PARALLEL 256CABGA

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70T3509MS133BPGI8

HIGH-SPEED 2.5V SYNCHRONOUS DUAL-PORT STATIC RAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3509MS133BP

HIGH-SPEED2.5V1024Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeatfeatures ◆Inter

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70T3509MS133BPG

HIGH-SPEED2.5V1024Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeatfeatures ◆Inter

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70T3509MS133BPG

HIGH-SPEED2.5VSYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3509MS133BPI

HIGH-SPEED2.5V1024Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeatfeatures ◆Inter

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

IDT70T3509MS133BPG

HIGH-SPEED2.5V1024Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT70T3509MS133BPGI

HIGH-SPEED2.5V1024Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT70T3509MS133BPI

HIGH-SPEED2.5V1024Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

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产品属性

  • 产品编号:

    70T3509MS133BPGI

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    易失

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 双端口,同步

  • 存储容量:

    36Mb(1M x 36)

  • 存储器接口:

    并联

  • 电压 - 供电:

    2.4V ~ 2.6V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    256-BGA

  • 供应商器件封装:

    256-CABGA(17x17)

  • 描述:

    IC SRAM 36MBIT PARALLEL 256CABGA

供应商型号品牌批号封装库存备注价格
RENESAS
21+
BGA
5590
询价
RENESAS(瑞萨)/IDT
2022+原装正品
CABGA-256(17x17)
18000
支持工厂BOM表配单 公司只做原装正品货
询价
RENESAS(瑞萨)
23+
256-CABGA (17.00L X 17.00W X 1
30
全新、原装
询价
23+
N/A
85300
正品授权货源可靠
询价
IDT
13+
sopdip
1000
优势供货假一赔十-军工器件供货商
询价
IDT
2019
Tray
324554
原装进口现货
询价
IDT
三年内
1983
纳立只做原装正品13590203865
询价
IDT
20+
NA
330
以质为本,只做原装正品
询价
IDT, Integrated Device Technol
21+
6-XFBGA,CSPBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
IDT, Integrated Device Technol
21+
256-CABGA(17x17)
56200
一级代理/放心采购
询价
更多70T3509MS133BPGI供应商 更新时间2024-4-28 8:00:00