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70T3519S166DR

包装:托盘 封装/外壳:208-BFQFP 类别:集成电路(IC) 存储器 描述:IC SRAM 9MBIT PARALLEL 208PQFP

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70T3519S166DRG

HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166DRG

HIGH-SPEED SYNCHRONOUS DUAL-PORT STATIC RAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166DRG8

HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166DRG8

HIGH-SPEED SYNCHRONOUS DUAL-PORT STATIC RAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166DRGI

HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166DRGI

HIGH-SPEED SYNCHRONOUS DUAL-PORT STATIC RAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166DRGI8

HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166DRGI8

HIGH-SPEED SYNCHRONOUS DUAL-PORT STATIC RAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166DRI

包装:托盘 封装/外壳:208-BFQFP 类别:集成电路(IC) 存储器 描述:IC SRAM 9MBIT PARALLEL 208PQFP

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70T3519S166BC

HIGH-SPEED2.5V256/128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:3.6ns(166MHz)/4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70T3519S166BCG

HIGH-SPEED2.5V256/128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166BCG

HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166BCGI

HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166BCGI

HIGH-SPEED2.5V256/128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:3.6ns(166MHz)/4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70T3519S166BCGI

HIGH-SPEED2.5V256/128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70T3519S166BCI

HIGH-SPEED2.5V256/128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:3.6ns(166MHz)/4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70T3519S166BF

HIGH-SPEED2.5V256/128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:3.6ns(166MHz)/4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70T3519S166BFG

HIGH-SPEED2.5V256/128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:3.6ns(166MHz)/4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70T3519S166BFG

HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

产品属性

  • 产品编号:

    70T3519S166DR

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    易失

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 双端口,同步

  • 存储容量:

    9Mb(256K x 36)

  • 存储器接口:

    并联

  • 电压 - 供电:

    2.4V ~ 2.6V

  • 工作温度:

    0°C ~ 70°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    208-BFQFP

  • 供应商器件封装:

    208-PQFP(28x28)

  • 描述:

    IC SRAM 9MBIT PARALLEL 208PQFP

供应商型号品牌批号封装库存备注价格
IDT, Integrated Device Technol
21+
208-PQFP(28x28)
56200
一级代理/放心采购
询价
IDT
1931+
N/A
1186
加我qq或微信,了解更多详细信息,体验一站式购物
询价
IDT
20+
QFP-208
12
就找我吧!--邀您体验愉快问购元件!
询价
IDT
22+
NA
1186
加我QQ或微信咨询更多详细信息,
询价
IDT, Integrated Device Techno
2022+
208-PQFP(28x28)
7300
原装现货
询价
Renesas Electronics America In
24+
208-BFQFP
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
IDT
RoHSCompliant
Tray
60
neworiginal
询价
IDT, Integrated Device Technol
21+
256-LBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
RENESAS(瑞萨)/IDT
2117+
CABGA-256(17x17)
315000
6个/托盘一级代理专营品牌!原装正品,优势现货,长期
询价
Renesas
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
更多70T3519S166DR供应商 更新时间2024-4-30 10:01:00