丝印：70R1K2P7；Package：ThinPAK5x6SMD；MOSFET 700V CoolMOS짧 P7 Power Transistor

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charg

文件：1.82577 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：70R1K4P7；Package：ThinPAK5x6SMD；700V CoolMOS짧 P7 Power Transistor

MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ P7 is an optimized platform tailored to target cost sensitive app

文件：1.80355 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：70R2K0P7；Package：SMD；700V CoolMOSª P7 Power Transistor

Features • Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss • Excellent thermal behavior • Integrated ESD protection diode • Low switching losses (Eoss) • Fully qualified acc. JEDEC for Industrial Applications

文件：1.79911 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：70R600P7；Package：ThinPAK5x6SMD；MOSFET 700V CoolMOS짧 P7 Power Transistor

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charg

文件：1.79349 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：70R750P7；Package：ThinPAK5x6SMD；700V CoolMOS짧 P7 Power Transistor

MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ P7 is an optimized platform tailored to target cost sensitive app

文件：1.82602 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：70R900P7；Package：ThinPAK5x6SMD；700V CoolMOS짧 P7 Power Transistor

MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ P7 is an optimized platform tailored to target cost sensitive app

文件：1.82573 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：70R900Q；Package：TO-220F-3L；700V 0.9Ω N-channel MOSFET

 Description MMF70R900Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

文件：1.27119 Mbytes 页数：10 Pages

MGCHIP

丝印：70R1K3S；Package：IPAK；N-channel 700 V, 1.3 Ω typ., 5 A Power MOSFET in an IPAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Applications • Switching applications Description This device is an high voltage N-channel Power MOSFET. This product offers improv

文件：232.28 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：70R190C；Package：TO-220F；700V Super-junction Power MOSFET

Description 700V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness

文件：917.94 Kbytes 页数：12 Pages

WUMC

紫光国微

丝印：70R260M；Package：TO-220F；700V Super-junction Power MOSFET

Description 700V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness m

文件：714.19 Kbytes 页数：10 Pages

WUMC

紫光国微