丝印：6T；Package：TO-236AB；45 V, 500 mA PNP general-purpose transistors

Features and benefits Three current gain selections High-temperature applications up to 175 °C AEC-Q101 qualified

文件：366.75 Kbytes 页数：21 Pages

NEXPERIA

安世

丝印：6T；Package：SC-76；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8 V to 10 V • Specifie

文件：234.92 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：6T；Package：SOD323；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8 V to 10 V • Specifie

文件：235.89 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：6T；Package：SOT666；NPN/NPN resistor-equipped transistors;

General description NPN/NPN Resistor-Equipped Transistors (RET). Features ■ Built-in bias resistors ■ Simplifies circuit design ■ Reduces component count ■ Reduces pick and place costs Applications ■ Low current peripheral driver ■ Control of IC inputs ■ Replaces general-purpose transist

文件：179.51 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：6T；Package：WCSP6E；Load Switch IC with Over current limited function

The TCK22xxxG, TCK2065G and TCK1024G are Load Switch ICs for power management with Over Current Limited function featuring low switch on resistance, ultra low quiescent current, high output current and wide input voltage range. Typical switch ON resistance is only 31 mΩ at VIN = 5.0 V, IOUT = -0.1

文件：696.52 Kbytes 页数：13 Pages

TOSHIBA

东芝

丝印：6T；Package：SOD-323FL；Zener Diode

●Feature High reliability Small mold type ●Application Voltage regulation

文件：2.32252 Mbytes 页数：9 Pages

ROHM

罗姆

丝印：6T；MOS ANALOG INTEGRATED CIRCUIT

FEATURES • Low Noise : NV = −101 dBV TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : NV = −102 dBV TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ • High Gain : GV = +6.5 dB TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +8.5 dB TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ • Low Consumption Current : ID

文件：201.1 Kbytes 页数：9 Pages

RENESAS

瑞萨

丝印：6T；MOS ANALOG INTEGRATED CIRCUIT

FEATURES • Low Noise : NV = −101 dBV TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : NV = −102 dBV TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ • High Gain : GV = +6.5 dB TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +8.5 dB TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ • Low Consumption Current : ID

文件：201.1 Kbytes 页数：9 Pages

RENESAS

瑞萨

丝印：6T；Package：SOD-123FL；Zener Diode

文件：2.29608 Mbytes 页数：10 Pages

ROHM

罗姆

丝印：6T；Package：SOD-123FL；Zener Diode

文件：2.29655 Mbytes 页数：10 Pages

ROHM

罗姆