BC807-25H

45 V, 500 mA PNP general-purpose transistors

Featuresandbenefits Threecurrentgainselections High-temperatureapplicationsupto175°C AEC-Q101qualified

BC807-25HR

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-236-3，SC-59，SOT-23-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：BC807-25H/SOT23/TO-236AB

BC807-25HVL

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-236-3，SC-59，SOT-23-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：BC807-25H/SOT23/TO-236AB

BC807-25HZ

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-236-3，SC-59，SOT-23-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：BC807-25H/SOT23/TO-236AB

BC807-25

PNPgeneralpurposetransistor

DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC817. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification.

BC807-25

PNPSURFACEMOUNTTRANSISTOR

Features 310mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifier Applications ComplementaryNPNTypesAvailable(BC817)

BC807-25

SwitchingandAmplifierApplications

SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818

BC807-25

PNPSURFACEMOUNTTRANSISTOR

Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3)

BC807-25

PNPSiliconAFTransistors

PNPSiliconAFTransistor •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BC817.../W,BC818.../W(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

BC807-25

SurfacemountSi-EpitaxialPlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation310mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC807-25

PNPGeneralPurposeAmplifier

SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818

BC807-25

SMALLSIGNALPNPTRANSISTORS

TypeMarking BC807-255B BC807-405C ■SILICONEPITAXIALPLANARPNPTRANSISTORS ■MINIATURESOT-23PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THENPNCOMPLEMENTARYTYPESAREBC817-25ANDBC817-40RESPECTIVELY APPLICATIONS ■WELLSUITABLEFORPORTABLEEQUIPMENT

BC807-25

PNPSURFACEMOUNTTRANSISTOR

Features 310mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifierApplications ComplementaryNPNTypesAvailable(BC817)

BC807-25

GeneralPurposeTransistorPNPSilicon

GeneralPurposeTransistorPNPSilicon P/bLead(Pb)-Free

BC807-25

PNPSURFACEMOUNTTRANSISTOR

Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3)

BC807-25

0.3WattsPNPPlastic-EncapsulateTransistors

Features —Ideallysuitedforautomaticinsertion —Epitaxialplanardieconstruction —Forswitching,AFdriverandamplifierapplications —ComplementaryNPNtypeavailable(BC817) —QualifiedtoAEC-Q101standardsforhighreliability MechanicalData —Case:SOT-23,Molded

BC807-25

PNPGENERALPURPOSETRANSISTORS

VOLTAGE45Volts POWER225mWatts FEATURES •Generalpurposeamplifierapplications •PNPepitaxialsilicon,planardesign •CollectorcurrentIC=500mA •Pbfreeproductareavailable:99Snabovecanmeet RoHSenvironmentsubstancedirectiverequest MECHANICALDATA Case:SOT-2

BC807-25

PNPGeneralPurposeAmplifier

FEATURES Ideallysuitedforautomaticinsertion. ComplementaryNPNtypeavailableBC817 Epitaxialplanardieconstruction. APPLICATIONS Thisdeviceisdesignedforgeneralpurposeamplifierandswitchingapplicationsatcurrentsto1.0A.

BC807-25

PNPSiliconAFTransistor

BC807-25

0.3Walts,PNPPlastic-EncasulateTransistor