UPD5741T6J-E4-A中文资料瑞萨数据手册PDF规格书

FEATURES

• Low Noise : NV = −101 dBV TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ

: NV = −102 dBV TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ

• High Gain : GV = +6.5 dB TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ

: GV = +8.5 dB TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ

• Low Consumption Current : IDD = 250 μA TYP. @ VDD = 2 V, RL = 2.2 kΩ

• Built-in the capacitor for RF noise immunity

• High ESD voltage

• 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm)