CoolMos Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; Halogen free mold compound CoolMOS CP is designed for: • Hard s

文件：562.77 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：D2PAK；Package：TO-263；N-Channel 650V (D-S) Power MOSFET

文件：1.10599 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

丝印：6R600P；Package：PG-TO200FP；CoolMos Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; Halogen free mold compound CoolMOS CP is designed for: • Hard s

文件：562.77 Kbytes 页数：10 Pages

Infineon

英飞凌

SCHOTTKY RECTIERS SILICON RECTIFIER DIODES

文件：48.9 Kbytes 页数：1 Pages

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