丝印：6M；Package：DFN2020MD-6；30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Extended temperature range Tj = 175 °C • Trench MOSFET technology

文件：301.61 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：6M；Package：SC-89；Bias Resistor Transistors

Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a mono

文件：608.57 Kbytes 页数：16 Pages

FS

丝印：6M；Package：SOT883；Single and dual-channel passive filter network with ESD protection

1.1 General description The IP4256CZ3-M is a single-channel low-pass filter while the IP4256CZ5-W and IP4256CZ6-F are dual-channel RC low-pass filters. All devices provide high-level ElectroStatic Discharge (ESD) protection. The devices are designed to protect a range of portable communication

文件：862.21 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：6M；Package：SC-89；Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a mono

文件：1.45259 Mbytes 页数：12 Pages

LEIDITECH

雷卯电子

丝印：6M；Package：SC-89；Bias Resistor Transistors

Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a mono

文件：774.3 Kbytes 页数：12 Pages

LRC

乐山无线电

丝印：6M；Package：4-Pin1mmx1mmThinMLF；High-Performance Single 150mA LDO

General Description The MIC5365/6 is an advanced general purpose linear regulator offering high power supply rejection (PSRR) in an ultra-small 1mm x 1mm package. The MIC5366 includes an auto-discharge feature that is activated when the enable pin is low. The MIC5365/6 is capable of sourcing 150m

文件：532.88 Kbytes 页数：18 Pages

Microchip

微芯科技

丝印：6M；Package：SOT-23；N-Channel RF Amplifier

N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50.

文件：73.57 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：6M；Package：SOT-23；SFET RF,VHF, UHF, Amplitiers

N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50.

文件：196.11 Kbytes 页数：2 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：6M；Package：SC-88；80 V, 100 mA NPN/PNP resistor-equipped double transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified

文件：373.79 Kbytes 页数：20 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：6M；Package：SC-88；80 V, 100 mA NPN/PNP resistor-equipped double transistors

1. General description NPN/PNP Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEITA NPN/NPN complement: PNP/PNP complement: NHUMD3 10 10 NHUMH

文件：373.81 Kbytes 页数：20 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司