NVLJWS6D0N04CLTAG

Marking：6D0N；Package：WDFNW6；MOSFET - Power, Single N-Channel 40 V, 5 m, 68 A

Features •SmallFootprintforCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMFS6D1N08HT1G

Marking：6D1N08；Package：DFN5；Power MOSFET 80 V, 5.5 m, 89 A, Single N?묬hannel

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFSW6D1N08H−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,Hal

NVMFWS6D2N08XT1G

Marking：6D2N8W；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 6.2 m, 71 A

Features •LowQRR,SoftRecoveryBodyDiode •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •SynchronousRectificat

NVMYS6D2N06CLTWG

Marking：6D2N06CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel 60 V, 6.1 m, 71 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

PSMN6R7-40MSD

Marking：6D7S40；Package：SOT1210；N-channel 40 V, 6.7 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

1.Generaldescription 50A,standardlevelN-channelenhancementmodeMOSFETin175°CLFPAK33packageusing advancedTrenchMOSSuperjunctiontechnology.Thisproducthasbeendesignedandqualifiedfor highefficiencyapplicationsathighswitchingfrequencies. 2.Featuresandbenefits •Av

SMA6F64A

Marking：6DE；Package：DO221-AC；600 W TVS in SMA Flat

Features •Peakpulsepower:600W(10/1000μs)and4kW(8/20μs) •Flatandthinpackage:1mm •Stand-offvoltagerangefrom5Vto188V •Unidirectionaltype •Lowleakagecurrent:0.2μAat25°Cand1μAat85°C •OperatingTjmax:175°C •HighpowercapabilityatTjmax.:upto40

SMA6F70A

Marking：6DK；Package：DO221-AC；600 W TVS in SMA Flat

Features •Peakpulsepower:600W(10/1000μs)and4kW(8/20μs) •Flatandthinpackage:1mm •Stand-offvoltagerangefrom5Vto188V •Unidirectionaltype •Lowleakagecurrent:0.2μAat25°Cand1μAat85°C •OperatingTjmax:175°C •HighpowercapabilityatTjmax.:upto40

SMA6F85A

Marking：6DZ；Package：DO221-AC；600 W TVS in SMA Flat

Features •Peakpulsepower:600W(10/1000μs)and4kW(8/20μs) •Flatandthinpackage:1mm •Stand-offvoltagerangefrom5Vto188V •Unidirectionaltype •Lowleakagecurrent:0.2μAat25°Cand1μAat85°C •OperatingTjmax:175°C •HighpowercapabilityatTjmax.:upto40

ST6206DS23RG

Marking：6D**；Package：SOT-23；Low ESR Low Drop Out Voltage Regulators

DESCRIPTION ST6206familyisapositivevoltagelinearregulators,lowpowerconsumption,highvotagemanufacturedwithCMOStechnology.Itprovideslargecurrentswithalowdropoutvoltage.ST6206consistsofcurrentlimitercircuit,drivertransistor,precisionreferencevoltageanderrorcorr

ST6206DS32RG

Marking：6D**；Package：SOT-23；Low ESR Low Drop Out Voltage Regulators

DESCRIPTION ST6206familyisapositivevoltagelinearregulators,lowpowerconsumption,highvotagemanufacturedwithCMOStechnology.Itprovideslargecurrentswithalowdropoutvoltage.ST6206consistsofcurrentlimitercircuit,drivertransistor,precisionreferencevoltageanderrorcorr