LDTA114YET1G

Marking：6D；Package：SC-89；Bias Resistor Transistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

MM1Z56

Marking：6D；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.500mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

MM1Z56

Marking：6D；Package：SOD-123F；SILICON PLANAR ZENER DIODES

Features •Totalpowerdissipation:max.500mW •Smallplasticpackagesuitableforsurfacemounteddesign •Toleranceapproximately±5

MMBF5457

Marking：6D；Package：SOT-23；N-Channel General Purpose Amplifier

N-ChannelGeneralPurposeAmplifier Thisdeviceisalowlevelaudioamplifierandswitchingtransistors,andcanbeusedforanalogswitchingapplications.SourcedfromProcess55.

NHUMB13

Marking：6D；Package：SOT363；80 V, 100 mA PNP/PNP resistor-equipped double transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •AEC-Q101qualified

NHUMB13

Marking：6D；Package：SC-88；80 V, 100 mA PNP/PNP resistor-equipped double transistors

1.Generaldescription PNP/PNPResistor-EquippeddoubleTransistor(RET)familyinaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA NPN/NPN complement: NPN/PNP complement: NHUMB102.247NHU

NHUMB13-Q

Marking：6D；Package：SC-88；80 V, 100 mA PNP/PNP resistor-equipped double transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

PBSS4021NX

Marking：6D；Package：SOT89；20 V, 7 A NPN low VCEsat (BISS) transistor

1.Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerand flatleadSOT89(SC-62)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS4021PX. 2.Featuresandbenefits •Verylowcollector-emittersaturationvoltageVCEsat •Hig

PEMB19

Marking：6D；Package：SOT666；PNP/PNP resistor-equipped transistors; R1 = 22 kW, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecost

PESD2CANFD24V-QC

Marking：6D；Package：DFN1412D-3；ESD protection for In-vehicle networks

1.Generaldescription ESDprotectiondeviceinanultrasmallDFN1412D-3(SOT8009)leadlessSurface-MountedDevice (SMD)plasticpackagewithsidewettableflanksdesignedtoprotecttwoautomotiveIn-vehicle networkbuslinesfromthedamagecausedbyElectroStaticdischarge(ESD)andothert