丝印：69；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：324 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：6900；Package：WSON；BQ2969 Overvoltage Protection for 2-Series, 3-Series, and 4-Series Cell Li-Ion Batteries with Regulated Output Supply

1 Features • 2-series, 3-series, and 4-series cell overvoltage protection (OVP) • Factory programmed OVP threshold (3.6V to 5.2V) with ±12mV accuracy • Fixed delay timer to trigger FET drive output (0.25s to 6.5s options) • Output pin options: – Active high – Open-drain - active pulldown

文件：1.13749 Mbytes 页数：23 Pages

TI

德州仪器

丝印：690T；Package：WSON；BQ2969T Overvoltage and Overtemperature Protection for 2-Series, 3-Series, and 4-Series Cell Li-Ion Batteries with LDO Output and Control / PTC Input

1 Features • 2-series, 3-series, and 4-series cell overvoltage protection (OVP) • Factory programmed OVP threshold (3.6V to 5.2V) with ±12mV accuracy • Fixed delay timer to trigger FET drive output (0.25s to 6.5s options) • Control input pin, which can implement cell overtemperature protec

文件：2.33876 Mbytes 页数：33 Pages

TI

德州仪器

丝印：6907；Package：WSON；BQ2969 Overvoltage Protection for 2-Series, 3-Series, and 4-Series Cell Li-Ion Batteries with Regulated Output Supply

1 Features • 2-series, 3-series, and 4-series cell overvoltage protection (OVP) • Factory programmed OVP threshold (3.6V to 5.2V) with ±12mV accuracy • Fixed delay timer to trigger FET drive output (0.25s to 6.5s options) • Output pin options: – Active high – Open-drain - active pulldown

文件：1.13749 Mbytes 页数：23 Pages

TI

德州仪器

丝印：6910；Package：SOP-8；Dual N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES | RosOM=16 mO@VES=10v © Ros =20 MO @VGS=4.5V | ® Super high density cell design for extremely low RoSON | ® Exceptional on-resistance and maximum DC curent cy |

文件：3.39687 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：6975；Package：SOP-8；Dual P-ChannelEnhancement Mode Power MOSFET

Application ® DC-DC Converters. * Load Switch. * Power Management.

文件：1.95215 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：695；Package：VSSOP；OPA695 Ultra-Wideband, Current-Feedback Operational Amplifier With Disable

1 Features • Wide bandwidth: – 1900MHz (G = +1V/V) – 600MHz (G = +8V/V) • Large-signal bandwidth (2VPP): 540MHz • Output voltage swing: ±4.05V • Ultra-high slew rate: 5000V/μs • Input voltage noise: 2nV/√Hz • Low distortion (RL = 100Ω, VO = 2VPP): – HD2, HD3 at 10MHz: –65dBc, –92dBc • Hi

文件：3.57159 Mbytes 页数：65 Pages

TI

德州仪器

丝印：695；Package：VSSOP；OPA695 Ultra-Wideband, Current-Feedback Operational Amplifier With Disable

1 Features • Wide bandwidth: – 1900MHz (G = +1V/V) – 600MHz (G = +8V/V) • Large-signal bandwidth (2VPP): 540MHz • Output voltage swing: ±4.05V • Ultra-high slew rate: 5000V/μs • Input voltage noise: 2nV/√Hz • Low distortion (RL = 100Ω, VO = 2VPP): – HD2, HD3 at 10MHz: –65dBc, –92dBc • Hi

文件：3.57159 Mbytes 页数：65 Pages

TI

德州仪器

丝印：69600Q；Package：HTSSOP；TLC696x0-Q1 Automotive Scan MOSFET Controller for TLC696x2/4/8-Q1

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Functional Safety-Capable: – Documentation available to aid functional safety system design •

文件：1.49645 Mbytes 页数：10 Pages

TI

德州仪器

丝印：69600Q；Package：WQFN；TLC696x0-Q1 Automotive Scan MOSFET Controller for TLC696x2/4/8-Q1

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Functional Safety-Capable: – Documentation available to aid functional safety system design •

文件：1.49645 Mbytes 页数：10 Pages

TI

德州仪器