| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to 文件:2.09837 Mbytes 页数:19 Pages | Infineon 英飞凌 | Infineon | ||
丝印:65C6600;Package:PG-TO262;650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to 文件:2.09837 Mbytes 页数:19 Pages | Infineon 英飞凌 | Infineon | ||
丝印:65C6600;Package:PG-TO220FullPAK;650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to 文件:2.09837 Mbytes 页数:19 Pages | Infineon 英飞凌 | Infineon | ||
丝印:65C6600;Package:PG-TO263;650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to 文件:2.09837 Mbytes 页数:19 Pages | Infineon 英飞凌 | Infineon | ||
丝印:65C6600;Package:PG-TO252;650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to 文件:2.09837 Mbytes 页数:19 Pages | Infineon 英飞凌 | Infineon | ||
丝印:65C6600;Package:PG-TO220;650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to 文件:2.09837 Mbytes 页数:19 Pages | Infineon 英飞凌 | Infineon |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
23+ |
TO262 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
INFINEON |
23+ |
TO263 |
8000 |
只做原装现货 |
询价 | ||
INFINEON |
23+ |
TO263 |
7000 |
询价 | |||
INFINEON/英飞凌 |
23+ |
TO251-3 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INFINEON |
1240+ |
TO251-3 |
60 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO252 |
12000 |
只做原装、原厂优势渠道、假一赔十 |
询价 | ||
INFINEON/英飞凌 |
24+ |
NA/ |
60 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
INFINEON/英飞凌 |
24+ |
TO252 |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
INFINEON |
24+ |
TO251-3 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
询价 | ||
INFINEON/英飞凌 |
25+ |
TO252 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 |
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