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65C6600

650V CoolMOS C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

文件:2.09837 Mbytes 页数:19 Pages

Infineon

英飞凌

IP165R600C6

丝印:65C6600;Package:PG-TO262;650V CoolMOS C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

文件:2.09837 Mbytes 页数:19 Pages

Infineon

英飞凌

IPA65R600C6

丝印:65C6600;Package:PG-TO220FullPAK;650V CoolMOS C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

文件:2.09837 Mbytes 页数:19 Pages

Infineon

英飞凌

IPB65R600C6

丝印:65C6600;Package:PG-TO263;650V CoolMOS C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

文件:2.09837 Mbytes 页数:19 Pages

Infineon

英飞凌

IPD65R600C6

丝印:65C6600;Package:PG-TO252;650V CoolMOS C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

文件:2.09837 Mbytes 页数:19 Pages

Infineon

英飞凌

IPP65R600C6

丝印:65C6600;Package:PG-TO220;650V CoolMOS C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

文件:2.09837 Mbytes 页数:19 Pages

Infineon

英飞凌

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
23+
TO262
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
INFINEON
23+
TO263
8000
只做原装现货
询价
INFINEON
23+
TO263
7000
询价
INFINEON/英飞凌
23+
TO251-3
50000
全新原装正品现货,支持订货
询价
INFINEON
1240+
TO251-3
60
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
INFINEON/英飞凌
22+
TO252
12000
只做原装、原厂优势渠道、假一赔十
询价
INFINEON/英飞凌
24+
NA/
60
优势代理渠道,原装正品,可全系列订货开增值税票
询价
INFINEON/英飞凌
24+
TO252
990000
明嘉莱只做原装正品现货
询价
INFINEON
24+
TO251-3
8500
原厂原包原装公司现货,假一赔十,低价出售
询价
INFINEON/英飞凌
25+
TO252
54648
百分百原装现货 实单必成 欢迎询价
询价
更多65C660供应商 更新时间2025-12-26 11:10:00