丝印：63D；Package：SOT-523；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AE

文件：419.29 Kbytes 页数：6 Pages

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丝印：63D；Package：SOT-523；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AE

文件：419.29 Kbytes 页数：6 Pages

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