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ATS636LSE

ProgrammableBackBiasedHall-EffectSwitchwithTPOSFunctionality

FEATURES ChopperStabilization Extremelylowswitch-pointdriftovertemperature On-chipProtection Supplytransientprotection Outputshort-circuitprotection Reverse-batteryprotection TrueZero-SpeedOperation TruePower-OnState Single-chipSensingICforHighReliability O

ALLEGRO

Allegro MicroSystems

ATS636LSETN-T

ProgrammableBackBiasedHall-EffectSwitchwithTPOSFunctionality

FEATURES ChopperStabilization Extremelylowswitch-pointdriftovertemperature On-chipProtection Supplytransientprotection Outputshort-circuitprotection Reverse-batteryprotection TrueZero-SpeedOperation TruePower-OnState Single-chipSensingICforHighReliability O

ALLEGRO

Allegro MicroSystems

ATS636LSETN-T

TheATS636LSEprogrammable,truepower-onstate(TPOS),deviceisoptimizedHall-effectICandrare-earthpelletcombinationsthatswitchinresponsetomagneticsignals...

ALLEGRO

Allegro MicroSystems

BC636

COMPLEMENTARYSILICONTRANSISTORS

MICRO-ELECTRONICS

Micro Electronics

BC636

PNPmediumpowertransistors

DESCRIPTION PNPmediumpowertransistorinaTO-92;SOT54plasticpackage.NPcomplements:BC635,BC637andBC639. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Audioandvideoamplifiers.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BC636

HighCurrentTransistors(PNPSilicon)

HighCurrentTransistorsPNPSilicon

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC636

HighCurrentTransistors

HighCurrentTransistorsPNPSilicon

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

BC636

PNPSiliconAFTransistors(HighcurrentgainHighcollectorcurrent)

PNPSiliconAFTransistors ●Highcurrentgain ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC635,BC637,BC639(NPN)

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

BC636

HighCurrentTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC636

PNPTypePlasticEncapsulateTransistors

FEATURE PowerDissipation:PCM:0.83mW(Tamb=25°C)

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

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