32K x 16 HIGH-SPEED CMOS STATIC RAM

32K x 16 HIGH-SPEED CMOS STATIC RAM

文件：50.77 Kbytes 页数：3 Pages

ISSI

矽成半导体

32K x 16 HIGH-SPEED CMOS STATIC RAM

ISSI

矽成半导体

32K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.

文件：432.55 Kbytes 页数：8 Pages

ICSI

32K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 12 ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh required • Available in 44-pin TSOP (Type II) p

文件：366.8 Kbytes 页数：14 Pages

ISSI

矽成半导体

32K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low po

文件：86.02 Kbytes 页数：16 Pages

ISSI

矽成半导体