IGBT

ZOCA

卓凯半导体

Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package

文件：1.99377 Mbytes 页数：10 Pages

FOSHAN

蓝箭电子

New Products, Tips and Tools for Power and Mobile Applications

文件：3.23672 Mbytes 页数：12 Pages

FAIRCHILD

仙童半导体

650 V, 60 A Field Stop IGBT

Features • Maximum Junction Temperature : TJ = 175oC • Positive Temperature Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A • Fast Switching : EOFF = 7.5 uJ/A • Tighten Parameter Distribution • RoHS Compliant

文件：438 Kbytes 页数：11 Pages

ONSEMI

安森美半导体