Metal Oxide Semiconductor Field Effect Transistor

Features •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)

文件：1.14682 Mbytes 页数：15 Pages

INFINEON

英飞凌

丝印：60C7180；Package：PG-TO220；Metal Oxide Semiconductor Field Effect Transistor

Features •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)

文件：1.14682 Mbytes 页数：15 Pages

INFINEON

英飞凌

丝印：60C7180；Package：PG-TO263；600V CoolMOS짧 C7 Power Transistor

文件：1.21793 Mbytes 页数：14 Pages

INFINEON

英飞凌

TO-247AC

VISHAYVishay Siliconix

威世威世科技公司

上传：深圳市智创诚芯电子科技有限公司

TO-247

INFINEON/英飞凌

上传：深圳市英科美电子有限公司