丝印：6005AN；Package：SOT23-6L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6005AN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=60V,ID=5A RDS(ON)

文件：711.65 Kbytes 页数：8 Pages

NCEPOWER

新洁能

丝印：6005AR；Package：SOT-223-3L；N-Channel Enhancement Mode Power MOSFET

General Features VDS=60V,ID=5A RDS(ON)

文件：289.42 Kbytes 页数：8 Pages

RECTRON

丽正国际

Aluminum Multiple Tap Connector, Clear Insulated, 5 Port, 2 Sided Entry, 4 AWG-600 kcmil, Al/Cu Rated.

文件：264.26 Kbytes 页数：2 Pages

HUBBELL

Burndy Insulated Block with Double Side Entry,Wire Size Accomodated(Al/Cu) Str-600,5 wire ports, Flex Conductor rated,Length:6.312 in.

文件：256.089 Kbytes 页数：1 Pages

HUBBELL