丝印：5l；Package：SSON004R1010；Free Time Delay Setting CMOS Voltage Detector (Reset) IC

General Description ROHM's Free Time Delay Setting CMOS Voltage Detector ICs are highly accurate, with ultra-low current consumption feature that uses CMOS process. Delay time setting can be control by an external capacitor. The lineup includes N-channel open drain output (BD52xx NVX-2C) and

文件：1.40163 Mbytes 页数：21 Pages

ROHM

罗姆

丝印：5L；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：5L；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：5L；Package：SOD-523；SMD ESD Protection Diode

Features - Low capacitance: 0.4pF (typical). - Low leakage current. - Low clamping voltage. IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC61000-4-4 (EFT) 40A (5/50ns) - Transient protection for high-speed data lines Cable discharge event (CDE) - Protects one data, control line. - Ultr

文件：762.37 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：5L；Package：DFN0603；Transient Voltage Suppressors for ESD Protection

Features Bidirectional ESD Protection of one line; Low Capacitance 0.5 pF Low clamping voltage; Ultra small SMD special packages Nominal Dimensions:0.6x0.3x0.26mm ESD protection to IEC61000-4-2(ESD): ±15kV (air discharge) ±8kV (contact discharge) Applications Cell Phone Handsets and Ac

文件：2.46139 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：5L；Package：SOD-523；Transient Voltage Suppressors for ESD Protection

Features Low Capacitance 0.5 pF Protects One unidirectional I/O Line Low clamping voltage Working voltages : 5.0V Low leakage current Response Time is Typically

文件：2.31343 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：5L；Package：SOT323；80 V, 100 mA PNP resistor-equipped transistors

1. General description PNP Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEITA NPN complement: NHDTA114EU 10 10 NHDTC114EU NHDTA124EU 22 22 NHDTC124EU

文件：295.87 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：5L；Package：SOT323；80 V, 100 mA PNP resistor-equipped transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified

文件：295.86 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：5L；Package：SOT323；80 V, 100 mA PNP resistor-equipped transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：306.41 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：5L；Package：SOT23；20 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology 3. Applications •

文件：270.52 Kbytes 页数：12 Pages

NEXPERIA

安世