NXV65UP

Marking：5L；Package：SOT23；20 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23Surface-Mounted Device(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFETtechnology 3.Applications •

PBSS304PX

Marking：5L；Package：SC-62；60 V, 4.2 A PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

RT8097DLGB

Marking：5L；Package：SOT-23-5；2A, 1MHz, 6V CMCOT Synchronous Step-Down Converter

GeneralDescription TheRT8097Disahighefficiencysynchronousstep-downDC-DCconverter.Itsinputvoltagerangeisfrom2.7Vto6Vandprovidesanadjustableregulatedoutputvoltagefrom0.6Vto3.4Vwhiledeliveringupto2Aofoutputcurrent. Theinternalsynchronouslowon-resistancepow

STLJS050N12MCLLTAG

Marking：5L；Package：UDFN6；MOSFET - Power, Single N-Channel, Shielded Gate, PowerTrench 120 V, 50.6 m, 4.5 A

Features •ShieldedGateMOSFETTechnology •50LowerQrrthanOtherMOSFETSuppliers •LowersSwitchingNoise/EMI •LowProfile−0.5mminMicroFET2x2mm •100UILTested •TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications •PrimaryDC−DCMOSFET •SynchronousRect

ESD3Z5.0D

Marking：5L；Package：SOD-323；Ultra Low Capacitance ESD Protection Diode

ESD3Z5.0D

Marking：5L；Package：SOD-323；Ultra Low Capacitance ESD Protection Diode

ESD5Z5.0D

Marking：5L；Package：SOD-523；Ultra Low Capacitance ESD Protection Diode

ESD5Z5.0D

Marking：5L；Package：SOD-523；Ultra Low Capacitance ESD Protection Diode

ESD5Z5L

Marking：5L；Package：SOD-523；Ultra low leakage: nA level

MM5Z16V

Marking：5L；Package：SOD-523；200mW SOD-523 SU R F ACE MOUNT Zener Voltage Regulators