丝印：5F；Package：SOT353-1；Low-power 2-input NOR gate with voltage-level translator

1. General description The 74AUP1T02 provides the single 2-input NOR function. This device ensures a very low static and dynamic power consumption across the entire VCC range from 2.3 V to 3.6 V. The 74AUP1T02 is designed for logic-level translation applications with input switching levels that

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安世安世半导体(中国)有限公司

丝印：5F；Package：SOT1226-3；Low-power 2-input NOR gate with voltage-level translator

1. General description The 74AUP1T02 provides the single 2-input NOR function. This device ensures a very low static and dynamic power consumption across the entire VCC range from 2.3 V to 3.6 V. The 74AUP1T02 is designed for logic-level translation applications with input switching levels that

文件：233.73 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：5F；Package：SOT-23；Small Signal Transistors (PNP)

Features • PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups (-16, -25, and -40) according to their current gain. • As c

文件：228.56 Kbytes 页数：5 Pages

GE

GE Industrial Company

丝印：5F；Package：TSSOP6；65 V, 100 mA PNP/PNP general-purpose transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors

文件：241.71 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：5F；Package：TSSOP6；65 V, 100 mA PNP/PNP general-purpose transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • Qualified according to AEC-Q101 and recommended for use in automotive

文件：244.15 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：5F；Package：DFN2020MD-6；40 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Extended temperature range Tj = 175 °C • Side wettable flanks for o

文件：288.37 Kbytes 页数：15 Pages

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安世安世半导体(中国)有限公司

丝印：5F；Package：SOD323；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A), ±2 (BZX384-B) and approximately ±5 (BZX384-C) tolerance range. The series includes 37 breakdown vol

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安世安世半导体(中国)有限公司

丝印：5F；Package：SOD323；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A) tolerance range. The series includes 37 breakdown voltages with nominal working voltages from 2.4 V to

文件：302.42 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：5F；Package：SC-76；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A), ±2 (BZX384-B) and approximately ±5 (BZX384-C) tolerance range. The series includes 37 breakdown vol

文件：306.61 Kbytes 页数：14 Pages

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安世安世半导体(中国)有限公司

丝印：5F；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司