BZX884S-C6V2-Q

Marking：5F；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

CPDQT5V0ASP-HF

Marking：5F；Package：DFN1006；SMD ESD Protection Diode

Features -Ultral-lowcapacitance:0.35pF(typ.). -Reverseworkingvoltage:5V -IEC61000-4-2(ESDair):±20kV IEC61000-4-2(ESDcontact):±17kV IEC61000-4-5(surge):4.5A(8/20μs)

DMN2025UFDF-13

Marking：5F；Package：U-DFN2020-6；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features 0.6mmProfile–IdealforLowProfileApplications PCBFootprintof4mm2 LowGateThresholdVoltage FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveappl

DMN2025UFDF-7

Marking：5F；Package：U-DFN2020-6；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features 0.6mmProfile–IdealforLowProfileApplications PCBFootprintof4mm2 LowGateThresholdVoltage FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveappl

MM1Z15

Marking：5F；Package：SOD-123F；SILICON PLANAR ZENER DIODES

Features •Totalpowerdissipation:max.500mW •Smallplasticpackagesuitableforsurfacemounteddesign •Toleranceapproximately±5

MM1Z15

Marking：5F；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.500mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

NCS2252SQ2T2G

Marking：5F；Package：SC-88A；Comparator, High Speed, 50 ns, Low Voltage, Rail-to-Rail

TheNCS2250andNCS2252lowvoltagecomparatorsfeaturefast responsetimeandrail−to−railinputandoutput.Theextended commonmodeinputvoltagerangeallowsinputsignals200mVabove andbelowtherails,allowingvoltagedetectionatgroundorthesupply. Apropagationdelayof50nswit

NCV2252SQ2T2G

Marking：5F；Package：SC-88A；Comparator, High Speed, 50 ns, Low Voltage, Rail-to-Rail

TheNCS2250andNCS2252lowvoltagecomparatorsfeaturefast responsetimeandrail−to−railinputandoutput.Theextended commonmodeinputvoltagerangeallowsinputsignals200mVabove andbelowtherails,allowingvoltagedetectionatgroundorthesupply. Apropagationdelayof50nswit

NHDTA114EU

Marking：5F；Package：SC-70；80 V, 100 mA PNP resistor-equipped transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •AEC-Q101qualified

NHDTA114EU

Marking：5F；Package：SOT323；80 V, 100 mA PNP resistor-equipped transistors

1.Generaldescription PNPResistor-EquippedTransistor(RET)familyinaverysmallSOT323(SC-70)Surface-Mounted Device(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA NPNcomplement: NHDTA114EU1010NHDTC114EU NHDTA124EU2222NHDTC124EU