74AUP1T50GW

Marking：5E；Package：SOT353-1；Low-power buffer with voltage-level translator

1.Generaldescription The74AUP1T50providesthesinglebufferfunction.Thisdeviceensuresaverylowstaticand dynamicpowerconsumptionacrosstheentireVCCrangefrom2.3Vto3.6V. The74AUP1T50isdesignedforlogic-leveltranslationapplicationswithinputswitchinglevelsthat acc

74AUP1T50GX

Marking：5E；Package：SOT1226-3；Low-power buffer with voltage-level translator

1.Generaldescription The74AUP1T50providesthesinglebufferfunction.Thisdeviceensuresaverylowstaticand dynamicpowerconsumptionacrosstheentireVCCrangefrom2.3Vto3.6V. The74AUP1T50isdesignedforlogic-leveltranslationapplicationswithinputswitchinglevelsthat acc

BC808-16

Marking：5E；Package：SOT-23；Small Signal Transistors (PNP)

Features •PNPSiliconEpitaxialPlanarTransistorsforswitching,AFdriverandamplifierapplications. •Especiallysuitedforautomaticinsertioninthickandthin-filmcircuits. •Thesetransistorsaresubdividedintothreegroups(-16,-25,and-40)accordingtotheircurrentgain. •Asc

BZX884S-C68

Marking：5E；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

BZX884S-C68-Q

Marking：5E；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

MM1Z13

Marking：5E；Package：SOD-123F；SILICON PLANAR ZENER DIODES

Features •Totalpowerdissipation:max.500mW •Smallplasticpackagesuitableforsurfacemounteddesign •Toleranceapproximately±5

MM1Z13

Marking：5E；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.500mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

PBSS304NX

Marking：5E；Package：SC-62；60 V, 4.7 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PDTA115EE

Marking：5E；Package：SC-75；PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

PDTA115EE

Marking：5E；Package：SOT-523；PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

PNPresistor-equippedtransistors;R1=100kΩ,R2=100kΩ DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Re