5 A SMALL MOLD THYRISTOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

瑞萨

Silicon Diode, Dual, Common Anode, High Speed

Description: The NTE596 consists of two silicon diodes in an SOT–23 type surface mount package. The anodes are common and the device is intended for high–speed switching applications in thick and thin–film circuits.

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NTE

UHF LINEAR POWER TRANSISTOR

The RF Line UHF Linear Power Transistor . . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and 500 mW Band V TV transposer stages. Gold metallization and diffused emitter ballast resistors are used to enhanced reliability, ruggedness and linearity. • Band IV and V (470–860

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MOTOROLA

摩托罗拉

UHF LINEAR POWER TRANSISTOR

The RF Line UHF Linear Power Transistor . . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and 500 mW Band V TV transposer stages. Gold metallization and diffused emitter ballast resistors are used to enhanced reliability, ruggedness and linearity. • Band IV and V (470–860

文件：94.42 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉