SILICON N-CHANNEL RF POWER MOSFET

DESCRIPTION: The TPV596 is Designed for Common Source Push Pull RF Power Applications up to 400 MHz. FEATURES: • PG = 12 dB min. at 0.5 W/ 860 MHz • Common Emitter • Omnigold™ Metallization System

文件：18.58 Kbytes 页数：1 Pages

ASI

UHF LINEAR POWER TRANSISTOR

The RF Line UHF Linear Power Transistor . . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and 500 mW Band V TV transposer stages. Gold metallization and diffused emitter ballast resistors are used to enhanced reliability, ruggedness and linearity. • Band IV and V (470–860

文件：94.42 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

UHF LINEAR POWER TRANSISTOR

恩XP

SILICON N-CHANNEL RF POWER MOSFET

ASI Semiconductor

UHF LINEAR POWER TRANSISTOR

The RF Line UHF Linear Power Transistor . . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and 500 mW Band V TV transposer stages. Gold metallization and diffused emitter ballast resistors are used to enhanced reliability, ruggedness and linearity. • Band IV and V (470–860

文件：94.42 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI TPV596A is designed for MATV amplifiers up to 860 MHz and 500 mW band V TV transposer stages. FEATURES: • Difused emiter ballast resistors • PG = 12 dB at 0.5 W/ 860 MHz • Omnigold™ Metalization System

文件：18.37 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor