NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI TPV8100B is Designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28 V. FEATURES INCLUDE: • Internal Input, Output Matching • Common Emitter Configuration • Gold Metalization • Emitter Ballasting

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ASI

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including double input and output

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MOTOROLA

摩托罗拉

470-860 MHz, 150 W, 28 V RF Power Transistor

Overview TPV8100B removed from active portfolio. Possible Replacement Part: None.\n The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. \n•To be used class AB for TV band IV and V.\n•Specified 28 Volts, 860 MHz Characteristics\nOutput Power = 125 Watts (peak sync.)\nOutput Power = 100 Watts (CW)\nMinimum Gain = 8.5 dB\n•Specified 32 Volts, 860 MHz Characteristics\n Output Power = 150 Watts (peak sync.)\n•Circuit board photomaster av;

恩XP

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor