Silicon Diode, Dual, Common Anode, High Speed

Description: The NTE596 consists of two silicon diodes in an SOT–23 type surface mount package. The anodes are common and the device is intended for high–speed switching applications in thick and thin–film circuits.

文件：19.23 Kbytes 页数：2 Pages

NTE

Silicon Diode, Dual, Common Anode, High Speed

NTE

Silicon Power Rectifier Diode, 25 Amp

Features: ● 25 Amp @ TC = +100°C ● 300 Amp Surge Capability ● Rugged Construction ● Available in Standard (NTE5962, NTE5966) and Reverse (NTE5963, NTE5967) Polarity

文件：19.75 Kbytes 页数：2 Pages

NTE

Silicon Power Rectifier Diode, 25 Amp

Features: ● 25 Amp @ TC = +100°C ● 300 Amp Surge Capability ● Rugged Construction ● Available in Standard (NTE5962, NTE5966) and Reverse (NTE5963, NTE5967) Polarity

文件：19.75 Kbytes 页数：2 Pages

NTE

Silicon Power Rectifier Diode, 25 Amp

Features: ● 25 Amp @ TC = +100°C ● 300 Amp Surge Capability ● Rugged Construction ● Available in Standard (NTE5962, NTE5966) and Reverse (NTE5963, NTE5967) Polarity

文件：19.75 Kbytes 页数：2 Pages

NTE

Silicon Power Rectifier Diode, 25 Amp

Features: ● 25 Amp @ TC = +100°C ● 300 Amp Surge Capability ● Rugged Construction ● Available in Standard (NTE5962, NTE5966) and Reverse (NTE5963, NTE5967) Polarity

文件：19.75 Kbytes 页数：2 Pages

NTE

Rectifiers

NTE

Rectifiers

NTE