丝印：596；Package：SOT-23；PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

SOT 23 PNP silicon planar high voltage transistor

文件：125.58 Kbytes 页数：2 Pages

Zetex

丝印：5962-0050901QFA；Package：CFP；SNx4LVC257A Quadruple 2-Line to 1-Line Data Selectors and Multiplexers With 3-State Outputs

1 Features • Operate from 1.65V to 3.6V • Inputs accept voltages to 5.5V • Maximum tpd of 4.6ns at 3.3V • Typical VOLP (output ground bounce) 2V at VCC = 3.3V, TA = 25°C • Latch-up performance exceeds 250mA per JESD 17

文件：2.42227 Mbytes 页数：40 Pages

TI

德州仪器

丝印：5962-0051001QXA；Package：CFCBGA；SMJ320C6203 Fixed-Point Digital Signal Processor

1 Features 1• High-Performance Fixed-Point Digital Signal Processor (DSP) SMJ320C62x™ – 5-ns Instruction Cycle Time – 200-MHz Clock Rate – Eight 32-Bit Instructions/Cycle – 1600 Million Instructions per Second (MIPS) • 429-Pin Ball Grid Array (BGA) Package (GLP Suffix) • VelociTI™ Advance

文件：943.89 Kbytes 页数：74 Pages

TI

德州仪器

丝印：5962-0051301QCA；Package：CDIP；DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：640.77 Kbytes 页数：17 Pages

TI

德州仪器

丝印：5962；Package：CFP；ADC14155QML-SP, radiation hardened, 14-Bit, 155-MSPS, 1.1-GHz bandwidth A/D

1 Features 1• 5962R0626201VXC – Total Ionizing Dose (TID) 100 krad(Si) – Single Event Latch-up 120 MeV-cm2/mg (See Radiation Reports) • 1.1-GHz Full-Power Bandwidth • Internal Sample-and-Hold Circuit • Low-Power Consumption • Internal Precision 1-V Reference • Single-Ended or Differential

文件：899.94 Kbytes 页数：36 Pages

TI

德州仪器

丝印：5962；Package：CFP；ADC14155QML-SP, radiation hardened, 14-Bit, 155-MSPS, 1.1-GHz bandwidth A/D

1 Features 1• 5962R0626201VXC – Total Ionizing Dose (TID) 100 krad(Si) – Single Event Latch-up 120 MeV-cm2/mg (See Radiation Reports) • 1.1-GHz Full-Power Bandwidth • Internal Sample-and-Hold Circuit • Low-Power Consumption • Internal Precision 1-V Reference • Single-Ended or Differential

文件：899.94 Kbytes 页数：36 Pages

TI

德州仪器

丝印：5962；Package：CFP；LM98640QML-SP Radiation Hardness Assured (RHA), Dual Channel, 14-Bit, 40-MSPS Analog Front End With LVDS Output

1 Features 1• Radiation Hardened – TID 100 krad(Si) – Single Event Latch-Up (SEL) Immune to LET = 120 MeV-cm2/mg – Single Event Functional Interrupt (SEFI) Free to 120 MeV-cm2/mg – SMD 5962R1820301VXC • ADC Resolution: 14-Bit • ADC Sampling Rate: 5 MSPS to 40 MSPS • Input Level: 2.85 V

文件：642.16 Kbytes 页数：55 Pages

TI

德州仪器

丝印：5962；Package：CFP；LM98640QML-SP Radiation Hardness Assured (RHA), Dual Channel, 14-Bit, 40-MSPS Analog Front End With LVDS Output

1 Features 1• Radiation Hardened – TID 100 krad(Si) – Single Event Latch-Up (SEL) Immune to LET = 120 MeV-cm2/mg – Single Event Functional Interrupt (SEFI) Free to 120 MeV-cm2/mg – SMD 5962R1820301VXC • ADC Resolution: 14-Bit • ADC Sampling Rate: 5 MSPS to 40 MSPS • Input Level: 2.85 V

文件：642.16 Kbytes 页数：55 Pages

TI

德州仪器

丝印：5962-0051301QCA；Package：CDIP；DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：640.77 Kbytes 页数：17 Pages

TI

德州仪器

丝印：5962-0051301QCA；Package：CDIP；DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：640.77 Kbytes 页数：17 Pages

TI

德州仪器