丝印：57；Package：SOT353-1；Low-power buffer with voltage-level translator

1. General description The 74AUP1T17 provides the single buffer function. This device ensures a very low static and dynamic power consumption across the entire VCC range from 2.3 V to 3.6 V. The 74AUP1T17 is designed for logic-level translation applications with input switching levels that acc

文件：234.52 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：57；Package：SOT1226-3；Low-power buffer with voltage-level translator

1. General description The 74AUP1T17 provides the single buffer function. This device ensures a very low static and dynamic power consumption across the entire VCC range from 2.3 V to 3.6 V. The 74AUP1T17 is designed for logic-level translation applications with input switching levels that acc

文件：234.52 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：57；Package：SOT23；NPN high voltage transistor

1. General description NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BSR20A 2. Features and benefits • Low current (max. 300 mA) • High voltage (max. 160 V) 3. Applications • General purpose switching and amplification • Espe

文件：211.37 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：57；Package：SOT23；NPN high voltage transistors

1. General description NPN high-voltage transistor in a small SOT23 plastic package. PNP complements: BSR20A-Q. 2. Features and benefits • Low current (max. 300 mA) • High voltage (max. 160 V) • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applic

文件：191.25 Kbytes 页数：9 Pages

NEXPERIA

安世

丝印：57；Package：SOD523；Zener Diode

Features ● High reliability ● Very sharp reverse characteristic ● Low reverse current level ● Zener Voltage 2.4V~47V

文件：2.67073 Mbytes 页数：5 Pages

SAMYANG

三阳电子

丝印：57；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：324 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：57；Package：X2-DFN1010-4；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected up to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific ch

文件：555.28 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：57；Package：XQFN10；SIM card interface level translator with EMI filter and ESD protection

1 General description The NVT4557 device is built for interfacing a SIM card with a single low-voltage 1.08 V to 1.98 V host side interface. The NVT4557 contains three 1.62 V to 3.6 V level translators to convert the data, RSTn and CLKn signals between a SIM card and a host microcontroller. The N

文件：456.37 Kbytes 页数：26 Pages

恩XP

丝印：57；Package：XQFN10；SIM card interface level translator with EMI filter and ESD protection

1 General description The NVT4557 device is built for interfacing a SIM card with a single low-voltage 1.08 V to 1.98 V host side interface. The NVT4557 contains three 1.62 V to 3.6 V level translators to convert the data, RSTn and CLKn signals between a SIM card and a host microcontroller. Th

文件：452.09 Kbytes 页数：26 Pages

恩XP

丝印：57；Package：SOD-323HE；Schottky Barrier Diode

●Features High reliability Small mold type Super low IR ●Application General rectification

文件：2.29362 Mbytes 页数：8 Pages

ROHM

罗姆