56

型号：3.0SMC56；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

56

型号：74AUP1T14GW；Package：SOT353-1；Low-power inverter with voltage-level translator

1.Generaldescription The74AUP1T14providesasingleinvertingfunction.Thisdeviceensuresaverylowstaticand dynamicpowerconsumptionacrosstheentireVCCrangefrom2.3Vto3.6V. The74AUP1T14isdesignedforlogic-leveltranslationapplicationswithinputswitchinglevelsthat ac

56

型号：74AUP1T14GX；Package：SOT1226-3；Low-power inverter with voltage-level translator

1.Generaldescription The74AUP1T14providesasingleinvertingfunction.Thisdeviceensuresaverylowstaticand dynamicpowerconsumptionacrosstheentireVCCrangefrom2.3Vto3.6V. The74AUP1T14isdesignedforlogic-leveltranslationapplicationswithinputswitchinglevelsthat ac

56

型号：BZX584C4V3；Package：SOD523；Zener Diode

Features ●Highreliability ●Verysharpreversecharacteristic ●Lowreversecurrentlevel ●ZenerVoltage2.4V~47V

56

型号：BZX84-A4V3；Package：SOT23；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

56

型号：GLZ56；Package：MELF；500mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 500mWPowerDissipation 2.0–56VNominalZenerVoltage IdeallySuitedforAutomatedAssembly ForUseinVoltageStabilizerorReference

56

型号：PDTC115EK；Package：SOT-346；NPN resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓

NPNresistorequippedtransistor PDTC115EESOT416 PDTC115EEFSOT490 PDTC115EKSOT346 PDTC115EMSOT883 PDTC115ESSOT54(TO-92) PDTC115ETSOT23 PDTC115EUSOT323 •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •R

恩XP

56

型号：PDTC115EK；Package：SOT-346；PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

PNPresistor-equippedtransistors;R1=100kΩ,R2=100kΩ DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Re

PHI

56

型号：PDTC115EK；Package：SOT346；NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

56

型号：PDTC115EK；Package：SOT346；NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.