丝印：52A；1.0W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：105.93 Kbytes 页数：5 Pages

WTE

Won-Top Electronics

丝印：52A；Package：DO-214AC；SURFACE MOUNT SILICON ZENER DIODES

Vz : 3.0 - 300 Volts, Pd : 1 Watts Features ● Glass passivated chip ● Low leakage ● Built-in strain relief ● Low inductance ● High peak reverse power dissipation ● Lead (Pb)-free component ● For use in stabilizing and clipping with high power rating Mechanical Data ● Case: Molded pla

文件：271.25 Kbytes 页数：4 Pages

FS

丝印：52A；Package：SOT-23；HI-SURGE ESD PROTECTION

Features  IEC61000-4-2(ESD): ± 30 kV Air, ± 30 kV Contact  IEC61000-4-4(EFT): 40 A(5/50 ns)  IEC61000-4-5(Lightning): 13 A(8/20 uS)  Low clamping voltage  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：158.66 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：52A；Package：SOD-123FL；1W Silicon Planar Zener Diodes

Features Glass passivated chip Built-in strain relief Low inductance High peak reverse power dissipation Low reverse leakage For use in stabilizing and clipping with high power rating RoHS compliant

文件：619.23 Kbytes 页数：3 Pages

SY

顺烨电子

丝印：52A；Package：SOD-123FL；1.0W SURFACE MOUNT ZENER DIODE

Low Profile 1.33mm Max. Case Height 1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Material – UL Recognition Flammability Classification 94V-0

文件：104.54 Kbytes 页数：5 Pages

WTE

Won-Top Electronics

丝印：52A；Package：SMA；Surface Mount Zener Diodes

文件：261.35 Kbytes 页数：3 Pages

ANOVA

林朋科技

丝印：52A；Package：SOD-147；Surface Mount Zener Diodes

文件：267.23 Kbytes 页数：3 Pages

ANOVA

林朋科技

丝印：52AIL；Package：TSSOP；2:1, Single-Ended Multiplexer

FEATURES • 2:1 single-ended multiplexer • Q nominal output impedance: 15Ω (VDDO= 3.3V) • Maximum output frequency: 250MHz • Propagation delay: 2.7ns (maximum), (VDD= VDDO= 3.3V) • Input skew: 160ps (maximum), (VDD= VDDO= 3.3V) • Part-to-part skew: 490ps (maximum), (VDD= VDDO= 3.3V) • Additi

文件：395.94 Kbytes 页数：18 Pages

RENESAS

瑞萨

丝印：52AIL；Package：TSSOP；2:1, Single-Ended Multiplexer

FEATURES • 2:1 single-ended multiplexer • Q nominal output impedance: 15Ω (VDDO= 3.3V) • Maximum output frequency: 250MHz • Propagation delay: 2.7ns (maximum), (VDD= VDDO= 3.3V) • Input skew: 160ps (maximum), (VDD= VDDO= 3.3V) • Part-to-part skew: 490ps (maximum), (VDD= VDDO= 3.3V) • Additi

文件：395.94 Kbytes 页数：18 Pages

RENESAS

瑞萨

丝印：52AP；Package：SOT-23；P-Channel 30 V (D-S) MOSFET

Features ■ –1.3 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V –1.1 A, –30V RDS(ON) = 300 mΩ @ VGS = –4.5V ■ High performance trench technology for extremely low RDS(ON). ■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30 higher power handling capability.

文件：448.76 Kbytes 页数：5 Pages

UMW

友台半导体