50A, 60V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 50N06-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of swit

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UTC

友顺

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM50N06 uses advanced trench technology and design to provide excellent RDS(ON) with

文件：952.54 Kbytes 页数：6 Pages

ADV

爱德微

N-Channel Enhancement Mode Field Effect Transistor

文件：510.34 Kbytes 页数：6 Pages

ADV

爱德微

ThinkiSemi 50A,60V Insualted Planar N-Channel Power MOSFETs

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THINKISEMI

思祁半导体