4 Amps, 900 Volts N-CHANNEL POWER MOSFET

The UTC 4N90-N is a N-channel enhancement MOSFETadopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance andperfect switching performance. It also can withstand high energy pul • RDS(ON) < 4.2Ω @ VGS=10V, ID=2A \n• High switching speed \n• 100% avalanche tested \n• Improved dv/dt capability;

UTC

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ISC

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