4A, 650V N-CHANNEL  POWER MOSFET

The UTC 4N65Z-E is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power suppli • RDS(ON) = 3.1Ω @ VGS=10V, ID=2.2A \n• Fast Switching Capability \n• Avalanche Energy Specified \n• Improved dv/dt Capability, High Ruggedness;

UTC

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N-CHANNEL POWER MOSFET

文件：197.04 Kbytes 页数：6 Pages

UTC

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650V N-Channel Enhancement Mode Field Effect Transistor

FEATURES • Fast switching • 100% avalanche tested • Improved dv/dt capability APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply (UPS) • Power Factor Correction (PFC)

文件：490.08 Kbytes 页数：8 Pages

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650V N-Channel Enhancement Mode Field Effect Transistor

FEATURES • Fast switching • 100% avalanche tested • Improved dv/dt capability APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply (UPS) • Power Factor Correction (PFC)

文件：490.08 Kbytes 页数：8 Pages

ADV

爱德微

650V N-Channel Enhancement Mode Field Effect Transistor

FEATURES • Fast switching • 100% avalanche tested • Improved dv/dt capability APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply (UPS) • Power Factor Correction (PFC)

文件：490.08 Kbytes 页数：8 Pages

ADV

爱德微