N-CHANNEL JUNCTIN SILICON FET

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N-CHANNEL JUNCTIN SILICON FET

文件：241.41 Kbytes 页数：7 Pages

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N-CHANNEL ENHANCEMENT MODE

文件：211.89 Kbytes 页数：6 Pages

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N-CHANNEL JUNCTIN SILICON FET

文件：241.41 Kbytes 页数：7 Pages

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4A, 600V   N-CHANNEL POWER MOSFET

The UTC 4N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplie • RDS(ON) = 2.5Ω @VGS = 10 V \n• Ultra Low Gate Charge ( typical 15 nC )   \n• Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) \n• Fast Switching Capability \n• Avalanche Energy Specified \n• Improved dv/dt Capability, high Ruggedness;

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4A, 600V N-CHANNEL POWER MOSFET

The UTC 4N60K-MT is a high voltage power MOSFET and isdesigned to have better characteristics, such as fast switchingtime, low gate charge, low on-state resistance and have a highrugged avalanche characteristics. This power MOSFET is usuallyused at high speed switching applications in power supplies • RDS(ON) < 2.5Ω @VGS = 10 V\n• Fast Switching Capability\n• Avalanche Energy Specified\n• Improved dv/dt Capability, high Ruggedness;

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4A, 600V  N-CHANNEL  POWER MOSFET

The UTC 4N60K-TC is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supp R DS(ON) < 2.5 @ V GS =10 V, I D=2.0AFast Switching CapabilityAvalanche Energy SpecifiedImproved dv/dt Capability, high Ruggedness;

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