4A, 600V  N-CHANNEL  POWER MOSFET

The UTC 4N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power suppli • RDS(ON) = 2.5Ω @VGS = 10 V \n• Fast Switching Capability \n• Avalanche Energy Specified \n• Improved dv/dt Capability, high RuggednessA;

UTC

友顺

N-CHANNEL JUNCTIN SILICON FET

文件：262.1 Kbytes 页数：7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件：2.76231 Mbytes 页数：9 Pages

SUNMATE

森美特

600V N-Channel Enhancement Mode MOSFET

FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC)

文件：2.5004 Mbytes 页数：9 Pages

EVVOSEMI

翊欧

N-CHANNEL POWER MOSFET

文件：2.76231 Mbytes 页数：9 Pages

SUNMATE

森美特