4A, 1000V N-CHANNEL POWER MOSFET

The UTC 4N100 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and high breakdown voltage. • RDS(ON) < 3.5Ω @ VGS=10V, ID=2A \n• High switching speed \n• High breakdown voltage;

UTC

友顺

null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺

丝印：UTC4N100；Package：TO-220；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺

丝印：UTC4N100；Package：TO-220F1；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺

丝印：UTC4N100；Package：TO-220F2；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺

丝印：UTC4N100；Package：TO-220F；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺

丝印：UTC4N100；Package：TO-220；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺

丝印：UTC4N100；Package：TO-220F1；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺

丝印：UTC4N100；Package：TO-220F2；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺

丝印：UTC4N100；Package：TO-220F；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺