RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

文件：1.19064 Mbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications. • Typical Single--Ca

文件：1.01021 Mbytes 页数：18 Pages

恩XP

Standardized case sizes - High ripple current ??Multiplecase sizes

文件：240.64 Kbytes 页数：3 Pages

ILLINOISCAPACITOR

Standardized Case Sizes - High Ripple Current ??Multiple Case Sizes

文件：398.07 Kbytes 页数：3 Pages

ILLINOISCAPACITOR

Radial Lead High Frequency / Low Impedance

文件：137.72 Kbytes 页数：1 Pages

ILLINOISCAPACITOR

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：1.19064 Mbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifiers

文件：1.14805 Mbytes 页数：32 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifiers

文件：1.71871 Mbytes 页数：27 Pages

恩XP

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：457.66 Kbytes 页数：13 Pages

恩XP

105째C Low Impedance Radial Lead Aluminum Electrolytic Capacitors

文件：130.43 Kbytes 页数：5 Pages

ILLINOISCAPACITOR