464-SERIES

464 Series Edge Connector | DIN 41612

Features Highdensity64Contacts2RowsMetal-to-MetalConnectoron2.54mm(.100”)Grid ContactMaterial:CopperAlloywithselectivegoldplatingandtinontails: CLASS3:2-GoldFlashPlating CLASS2

AOD464

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD464usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceissuitableforuseinhighvoltagesynchronousrectification,loadswitchingandgeneralpurposeapplications.StandardProductAOD464isPb-free(meetsROHS

AOD464

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=40A@TC=25℃ •DrainSourceVoltage- :VDSS=105V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=28mΩ(Max) •100avalanchetested •MinimumLot-to-L

AOD464

N-Channel100-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFETS •175°CJunctionTemperature •LowThermalResistancePackage

AOD464

N-ChannelEnhancementModeFieldEffectTransistor

AOD464

N-ChannelEnhancementMOSFET

■Features ●VDS(V)=105V ●ID=40A(VGS=10V) ●RDS(ON)

AOD464L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD464usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceissuitableforuseinhighvoltagesynchronousrectification,loadswitchingandgeneralpurposeapplications.StandardProductAOD464isPb-free(meetsROHS

ARF464A

RFPOWERMOSFETsN-CHANNELENHANCEMENTMODE

TheARF464AandARF464BcompriseasymmetricpairofcommonsourceRFpowertransistorsdesignedforpushpullscientific,commercial,medicalandindustrialRFpoweramplifierapplicationsupto100MHz.Theyhavebeenoptimizedforbothlinearandhighefficiencyclassesofoperation. •Specifie

ARF464B

RFPOWERMOSFETsN-CHANNELENHANCEMENTMODE

TheARF464AandARF464BcompriseasymmetricpairofcommonsourceRFpowertransistorsdesignedforpushpullscientific,commercial,medicalandindustrialRFpoweramplifierapplicationsupto100MHz.Theyhavebeenoptimizedforbothlinearandhighefficiencyclassesofoperation. •Specifie

CM464

WedgeBase